Electronic Properties of FLG/InP Schottky Contacts

Graphene (Gr) is of great interest in the development new electronic, photonic, and composite materials. The physical properties Gr can vary depending on number layers, this unique property makes it a potential material for different electronic applications. In study, few-layer graphene (FLG) film was spin-coated onto InP semiconductor surface FLG/n-InP Schottky contact produced. quality FLG nano-film were determined by using Raman spectroscopy. Parameters such as ideality factor, barrier height, series resistance contacts calculated current-voltage (I-V) curves. With Gaussian distribution, mean factor Gr/InP found to be =1,47, height values =0.68 eV. standard deviation σ=0.32 σ=0.06 eV height. addition, from Cheung functions agreement with literature. Finally, current conduction mechanisms Gr/n-InP structure revealed examining logarithmic I-V characteristics.